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​Publications

YEAR 2022

  1. Winda Purwitasari, Rovi Angelo B. Villaos, Ina Marie R. Verzola, Ali Sufyan, Zhi-Quan Huang, Chia-Hsiu Hsu, and Feng-Chuan Chuang*, High Thermoelectric Performance in 2D Technetium Dichalcogenides TcX2 (X = S, Se, or Te), ACS Appl. Energy Mater. 2022

  2. Yen-Hui Lin, Chia-Hsiu Hsu, Iksu Jang, Chia-Ju Chen, Pok-Man Chiu, Deng-Sung Lin, Chien-Te Wu, Feng-Chuan Chuang,∗ Po-Yao Chang,∗ and Pin-Jui Hsu, Proximity-Effect-Induced Anisotropic Superconductivity in Monolayer Ni-Pb Binary Alloy, ACS Applied Materials and Interface 14, 23990–23997 (2022) (IF: 9.229, Rank: 44/335=13.13% MATERIALS SCIENCE, MULTIDISCIPLINARY)

  3. Ali Sufyan, Gennevieve Macam, Zhi-Quan Huang, Chia-Hsiu Hsu and Feng-Chuan Chuang*, Robust tunable large-gap quantum spin Hall states in monolayer Cu2S on insulating substrates, ACS Omega 7, 15760−15768 (2022) (IF: 3.512, Rank: 78/179=43.58% CHEMISTRY, MULTIDISCIPLINARY)

  4. Aniceto B. Maghirang III, Gennevieve Macam, Ali Sufyan, Zhi-Quan Huang, Chia-Hsiu Hsu, and Feng-Chuan Chuang*, Interplay between anisotropic spin texture and large gap topological insulating phases in functionalized MXenes, Chinese Journal of Physics 77, 2346-2354 (2022) (IF: 3.237, Rank: 29/85=34.12% MULTIDISCIPLINARY SCIENCES)

  5. Ajay Tiwari, D. Chandrasekhar Kakarla*, G. Macam, C. H. Hsu, F. C. Chuang, H. C. Wu, T. W. Kuo, Arkadeb Pal, H. Chou, D. P. Gulo, H. L. Liu, Y. C. Chuang, Y. C. Lai, C. A. Lee, Mitch M. C. Chou, and H. D. Yang, Spin-lattice-charge coupling in quasi-one-dimensional spin-chain NiTe2O5, Physical Review Materials 6(4), 044409 (2022) (IF: 3.989, Rank: 134/335=40.00% PHYSICS, MATERIALS SCIENCE, MULTIDISCIPLINARY)

  6. Liang-Ying Feng, Rovi Angelo B. Villaos, Aniceto B. Maghirang III, Zhi-Quan Huang, Chia-Hsiu Hsu, Hsin Lin, and Feng-Chuan Chuang*, Prediction of topological Dirac semimetal in Ca-based Zintl layered compounds CaM2X2 (M = Zn or Cd; X = N, P, As, Sb, or Bi), Scientific Reports 12, 4582 (2022) (IF: 4.379, Rank: 17/73=23.29% MULTIDISCIPLINARY SCIENCES)

  7. Marku Nyevel R. Perez, Rovi Angelo B. Villaos, Liang-Ying Feng, Aniceto B. Maghirang III, Chih-Peng Cheng, Zhi-Quan Huang, Chia-Hsiu Hsu, Arun Bansil, and Feng-Chuan Chuang*, Quantum spin Hall insulating phase and van Hove singularities in Zintl single-quintuple-layer AM2X2 (A=Ca, Sr, or Ba; M=Zn or Cd; X=Sb or Bi) family, Applied Physics Reviews 9, 011410 (2022). (IF: 19.162, Rank: 7/160=4.37% PHYSICS, APPLIED)

  8. Chun Yuen Ho, Chia Hsiang Li, Chao Ping Liu, Zhi-Quan Huang, Feng-Chuan Chuang*, and Kin Man Yu*, Doping Limitation Due to Self-compensation by Native Defects in In-doped Rocksalt CdxZn(1-x)O, Journal of Physics: Condensed Matter 34, 065702 (2022), (IF: 2.333, Rank: 41/69=59.42% PHYSICS, CONDENSED MATTER)

  9. Z. Wang, Cheng-Yi Huang, Chia-Hsiu Hsu, Hiromasa Namiki, Tay-Rong Chang, Feng-Chuan Chuang, Hsin Lin, Takao Sasagawa, Vidya Madhavan, and Yoshinori Okada, Observation of a van Hove singularity near a Fermi arc with prominent coupling to phonons in a Weyl semimetal, Physical Review B 105, 075110 (2022) (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  10. Arkadeb Pal, T. W. Kuo, Chia-Hsiu Hsu, D. C. Kakarla1, Ajay Tiwari, M. C. Chou, A. Patra, P. Yanda, E. Blundo, A. Polimeni, A. Sundaresan, Feng-Chuan Chuang, H. D. Yang*, Interplay of lattice, spin, and dipolar properties in CoTeMoO6: Emergence of Griffiths-like phase, metamagnetic transition, and magnetodielectric effect, Physical Review B 150, 024420 (2022) (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

YEAR 2021

  1. Mykola Telychko, Lulu Wang, Chia-Hsiu Hsu, Guangwu Li, Xinnan Peng, Shaotang Song, Jie Su, Feng-Chuan Chuang, Jishan Wu, Ming Wah Wong, Jiong Lu, Tailoring long-range superlattice chirality in molecular self-assemblies via weak fluorine-mediated interactions, Physical Chemistry Chemical Physics 23, 21489-21495 (2021). (IF:3.676, Rank: 8/37=21.26% PHYSICS, ATOMIC, MOLECULAR & CHEMICAL)

  2. Paul Albert L. Sino, Liang-Ying Feng, Rovi Angelo Angelo B. Villaos, Harvey N. Cruzado, Zhi-Quan Huang, Chia-Hsiu Hsu, and Feng-Chuan Chuang, Anisotropic Rashba splitting in Pt-based Janus monolayers PtXY (X, Y = S, Se, or Te), . (IF:4.380, Rank: 61/218=27.982% CHEMISTRY, MULTIDISCIPLINARY)

  3. Shaotang Song, Lulu Wang, Jie Su, Zhen Xu, Chia-Hsiu Hsu, Chenqiang Hua, Pin Lyu, Jing Li, Xinnan Peng, Takahiro Kojima, Shunpei Nobusue, Mykola Telychko, Yi Zheng, Feng-Chuan Chuang, Hiroshi Sakaguchi, Ming Wah Wong, Jiong Lu, Manifold Dynamic Non-Covalent Interactions for Steering Molecular Assembly and Cyclization, Chemical Science 12, 11659-11667 (2021). (IF:9.825, Rank: 22/178=12.36% CHEMISTRY, MULTIDISCIPLINARY)

  4. Ali Sufyan, Gennevieve Macam, Chia-Hsiu Hsu, Zhi-Quan Huang, Shin-Ming Huang, Hsin Lin, and Feng-Chuan Chuang, Theoretical prediction of topological insulators in two-dimensional ternary transition metal chalcogenides (MM'X4, M= Ta, Nb, or V; M’= Ir, Rh, or Co; X= Se or Te), Chinese Journal of Physics 73, 95 (2021). (IF: 3.237, Rank: 29/85=34.12% MULTIDISCIPLINARY SCIENCES)

  5. Chia-Hsiu Hsu, P. C. Sreeparvathy, Chanchal K. Barman, Feng-Chuang Chuang, and Aftab Alam, Coexistence of topological nontrivial and spin gapless semiconducting behavior in MnPO4: A composite quantum compound, Physical Review B. 103, 195143 (2021). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  6. Joseph A. Hlevyack, Liang-Ying Feng, Meng-Kai Lin, Rovi Angelo B. Villaos, Ro-Ya Liu, Peng Chen, Yao Li, Sung-Kwan Mo, Feng-Chuan Chuang and T.-C. Chiang, Dimensional crossover and band topology evolution in ultrathin semimetallic NiTe2 films, npj 2D Materials and Applications 5, 40 (2021). (IF: 11.106, Rank: 16/160=10.00% PHYSICS, APPLIED)

  7. Jiangming Cao, Zhi-Quan Huang, Gennevieve Macam, Yifan Gao, Naga Venkateswara Rao Nulakani, Xun Ge, Xiang Ye, Feng-Chuan Chuang, Li Huang, Prediction of massless Dirac fermions in a carbon nitride covalent network, Applied Physics Letters 118, 133104 (2021). (IF: 3.791, Rank: 47/160=29.38% PHYSICS, APPLIED)

  8. Gennevieve M. Macam, Ali Sufyan, Zhi-Quan Huang, Chia-Hsiu Hsu, Shin-Ming Huang, Hsin Lin, and Feng-Chuan Chuang, Tuning topological phases and electronic properties of monolayer ternary transition metal chalcogenides (ABX4, A/B =Zr, Hf, or Ti; X=S, Se, or Te), Applied Physics Letters 118, 111901 (2021). (IF: 3.791, Rank: 47/160=29.38% PHYSICS, APPLIED)

  9. Harvey N Cruzado, John Symon C Dizon, Gennevieve M Macam, Rovi Angelo B Villaos, Thi My Duyen Huynh, Liang-Ying Feng, Zhi-Quan Huang, Chia-Hsiu Hsu, Shin-Ming Huang, Hsin Lin, Feng-Chuan Chuang, Band Engineering and Van Hove Singularity on HfX2 Thin Films (X = S, Se, or Te), ACS Applied Electronic Materials 3, 3, 1071 (2021). (IF: 3.314, Rank: 95/273=34.80% ENGINEERING, ELECTRICAL & ELECTRONIC)

  10. K. Yamagam, Y. Fujisawa, B. Driesen, C. H. Hsu, K. Kawaguchi, H. Tanaka, T. Kondo, Y. Zhang, H. Wadati, K. Araki, T. Takeda, Y. Takeda, T. Muro, F. C. Chuang, Y. Niimi, K. Kuroda, M. Kobayashi, and Y. Okada, Itinerant ferromagnetism mediated by giant spin polarization of the metallic ligand band in the van der Waals magnet Fe5GeTe2, Physical Review B 103, L060403 (2021). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  11. Rovi Angelo B. VillaosRovi Angelo B. Villaos, Harvey N. Cruzado, John Symon C. Dizon, Aniceto B. Maghirang III, Zhi-Quan Huang, Chia-Hsiu Hsu, Shin-Ming Huang, Hsin Lin, and Feng-Chuan Chuang, Evolution of the Electronic Properties of ZrX2 (X = S, Se, or Te) Thin Films under Varying Thickness, J. Phys. Chem. C, 125, 1, 1134 (2021). (IF: 4.126, Rank: 68/162=41.98% CHEMISTRY)

  12. Guan-Yu Chen, Chia-Hsiu Hsu, Bo-You Liu, Li-Wei Chang, Deng-Sung Lin, Feng-Chuan Chuang and Pin-Jui Hsu, Quantum Well Electronic States in Spatially Decoupled 2D Pb Nanoislands on Nb-doped SrTiO3(001), Applied Surface Science 537, 147967 (2021). (IF: 6.707, Rank: 1/21=4.76% MATERIALS SCIENCE, COATINGS & FILMS)

YEAR 2020

  1. Y. Fujisawa, M. Pardo-Almanza, J. Garland, K. Yamagami, Z. Xing, X. Chen, K. Araki, T. Takeda, M. Kobayashi, Y. Takeda, C. H. Hsu, F. C. Chuang, R. Laskowski, K. H. Khoo, A. Soumyanarayanan, Y. Okada, Tailoring magnetism in self-intercalated Cr(1+δ)Te2 epitaxial films, Physical Review Materials 4, 114001 (2020). (IF: 3.989, Rank: 134/335=40.00% PHYSICS, MATERIALS SCIENCE, MULTIDISCIPLINARY)

  2. Zhi-Quan Huang, Chia-Hsiu Hsu, Christian P. Crisostomo, Gennevieve Macam, Jing-Rong Su, Hsin Lin, Arun Bansil, Feng-Chuan Chuang, Quantum anomalous Hall insulator phases in Fe-doped GaBi honeycomb, Chinese Journal of Physics 67, 246-252 (2020). (IF: 3.237, Rank: 29/85=34.12% MULTIDISCIPLINARY SCIENCES)

  3. Guannan Chen, Sean T. Howard, Aniceto B. Maghirang, III, Kien Nguyen Cong, Rovi Angelo B. Villaos, Liang-Ying Feng, Kehan Cai, Somesh C. Ganguli, Waclaw Swiech, Emilia Morosan, Ivan I. Oleynik, Feng-Chuan Chuang, Hsin Lin, and Vidya Madhavan, Correlating structural, electronic, and magnetic properties of epitaxial VSe2’ thin films, Physical Review B 102, 115149 (2020). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  4. Guojing Hu, Yuanmin Zhu, Junxiang Xiang, Tzu-Yi Yang, Meng Huang, Zhe Wang, Zhi Wang, Ping Liu, Ying Zhang, Chao Feng, Dazhi Hou, Wenguang Zhu, Meng Gu, Chia-Hsiu Hsu, Feng-Chuan Chuang, Yalin Lu, Bin Xiang, and Yu-Lun Chueh, Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure, ACS Nano, 14, 12037 (2020). (IF: 15.881, Rank: 21/335=6.27% MATERIALS SCIENCE, MULTIDISCIPLINARY)

  5. R. Okuma, D. Ueta, S. Kuniyoshi, Y. Fujisawa, B. Smith, C. H. Hsu, Y. Inagaki, W. Si, T. Kawae, H. Lin, Feng-Chuan Chuang, T. Masuda, R. Kobayashi, Y. Okada, Fermionic Order by Disorder in a van der Waals Antiferromagnet, Scientific Reports 10, 15311 (2020). (IF: 4.379, Rank: 17/73=23.29% MULTIDISCIPLINARY SCIENCES)

  6. Jia-Xin Yin, Nana Shumiya, Yuxiao Jiang, Huibin Zhou, Gennevieve Macam, Hano Omar Mohammad Sura, Songtian S. Zhang, Zijia Cheng, Zurab Guguchia, Yangmu Li, Qi Wang, Maksim Litskevich, Ilya Belopolski, Xian Yang, Tyler A. Cochran, Guoqing Chang, Qi Zhang, Zhi-Quan Huang, Feng-Chuan Chuang, Hsin Lin, Hechang Lei, Brian M. Andersen, Ziqiang Wang, Shuang Jia, and M. Zahid Hasan, Spin-orbit quantum impurity in a topological magnet, Nature Communications 11, 4415 (2020). (IF: 14.919, Rank: 4/73=5.48% MULTIDISCIPLINARY SCIENCES)

  7. Zhi-Quan Huang, Mei-Ling Xu, Gennevieve Macam, Chia-Hsiu Hsu, and Feng-Chuan Chuang, Large-Gap Topological Insulators in Functionalized Ordered Double-Transition-Metal MXenes, Physical Review B 102, 075306 (2020). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  8. Liang-Ying Feng, Rovi Angelo B. Villaos, Harvey N. Cruzado, Zhi-Quan Huang, Chia-Hsiu Hsu, Hung-Chung Hsueh, Hsin Lin, Feng-Chuan Chuang, Magnetic and topological properties in hydrogenated transition metal dichalcogenide monolayers, Chinese Journal of Physics 66, 15-23 (2020). (IF: 3.237, Rank: 29/85=34.12% MULTIDISCIPLINARY SCIENCES)

  9. Liang-Ying Feng, Rovi Angelo B. Villaos, Zhi-Quan Huang, Chia-Hsiu Hsu, and Feng-Chuan Chuang, Layer-dependent band engineering of Pd dichalcogenides: a first-principles study, New Journal of Physics 22, 053010 (2020). (IF: 3.729, Rank: 22/85=25.88% PHYSICS, MULTIDISCIPLINARY)

  10. Pavithra Sriram, Arumugam Manikandan, Feng-Chuan Chuang, and Yu-Lun Chueh, Hybridizing Plasmonic Materials with 2D-Transition Metal Dichalcogenides Toward Functional Applications, Small 16, 1904271 (2020). (IF: 13.281, Rank: 11/160=6.88% PHYSICS, APPLIED)

  11. Lin-Han Xu, Shun-Qing Wu, Zhi-Quan Huang, Feng Zhang, Feng-Chuan Chuang, Zi-Zhong Zhu and Kai-Ming Ho, HOT Graphene and HOT Graphene Nanotubes: New Low Dimensional Semimetals and Semiconductors, Nanoscale Research Letters 15, 56 (2020). (IF: 4.703, Rank: 38/160=23.75% PHYSICS, APPLIED)

  12. Shin-Ching Hsieh, Chia-Hsiu Hsu, Han-De Chen, Deng-Sung Lin, Feng-Chuan Chuang and Pin-Jui Hsu, Extended α-phase Bi atomic layer on Si (111) fabricated by thermal desorption, Applied Surface Science, 504, 144103, (2020). (IF: 6.707, Rank: 1/21=4.76% MATERIALS SCIENCE, COATINGS & FILMS)

  13. Chuanhao Yao, Cong-Qiao Xu, In-Hyeok Park, Meng Zhao, Ziyu Zhu, Jing Li, Xiao Hai, Hanyan Fang, Yong Zhang, Gennevieve Macam, Jinghua Teng, Lin Li, Qing-Hua Xu, Feng-Chuan Chuang, Junpeng Lu, Chenliang Su, Jun Li, and Jiong Lu, Giant emission enhancement of solid-state gold nanoclusters via surface engineering. Angewandte Chemie., 59, 2 (2020). (IF: 15.336, Rank: 16/179=8.94% CHEMISTRY, MULTIDISCIPLINARY)

  14. Meng-Kai Lin, Rovi Angelo B. Villaos, Joseph A. Hlevyack, Peng Chen, Ro-Ya Liu, Chia-Hsiu Hsu, José Avila, Sung-Kwan Mo, Feng-Chuan Chuang, and T. -C. Chiang, Dimensionality-mediated semimetal-semiconductor transition in ultrathin PtTe2 films. Physical Review Letters, 124 (3), 036402 (2020). (IF: 9.161, Rank: 7/85=8.24% PHYSICS, MULTIDISCIPLINARY)

YEAR 2019

  1. Jia-Xin Yin, Songtian S Zhang, Guangyang Dai, Yuanyuan Zhao, Andreas Kreisel, Gennevieve Macam, Xianxin Wu, Hu Miao, Zhi-Quan Huang, Johannes HJ Martiny, Brian M Andersen, Nana Shumiya, Daniel Multer, Maksim Litskevich, Zijia Cheng, Xian Yang, Tyler A Cochran, Guoqing Chang, Ilya Belopolski, Lingyi Xing, Xiancheng Wang, Yi Gao, Feng-Chuan Chuang, Hsin Lin, Ziqiang Wang, Changqing Jin, Yunkyu Bang, M Zahid Hasan, Quantum phase transition of correlated iron-based superconductivity in LiFe1-xCoxAs, Physical Review Letters 123 (21), 217004 (2019). (IF: 9.161, Rank: 7/85=8.24% PHYSICS, MULTIDISCIPLINARY)

  2. Aniceto B. Maghirang III, Zhi-Quan Huang, Rovi Angelo B. Villaos, Chia-Hsiu Hsu, Liang-Ying Feng, Emmanuel Florido, Hsin Lin, Arun Bansil, and Feng-Chuan Chuang, Predicting two-dimensional topological phases in Janus materials by substitutional doping in transition metal dichalcogenide monolayers, npj 2D Materials and Applications 3, 35 (2019). (IF: 11.106, Rank: 16/160=10.00% PHYSICS, APPLIED)

  3. Renjie Wei, Xiuming Bu, Wei Gao, Rovi Angelo B. Villaos, Gennevieve Macam, Zhi-Quan Huang, Changyong Lan, Feng-Chuan Chuang, Yongquan Qu, Johnny C. Ho, Engineering Surface Structure of Spinel Oxides via High-Valent Vanadium Doping for Remarkably Enhanced Electrocatalytic Oxygen Evolution Reaction, ACS Applied Materials & Interfaces 11, 33012 (2019). (IF: 9.229, Rank: 44/335=13.13% MATERIALS SCIENCE, MULTIDISCIPLINARY)

  4. Chun Yuen Ho, Chao Ping Liu, Yi-Chun Chen, Zhi-Quan Huang, Feng-Chuan Chuang, and Kin Man Yu, Effects of oxygen stoichiometry on the phase stability of sputter deposited CdxZn1-xO alloys, Physical Review Materials 3 (7), 074605 (2019). (IF: 3.989, Rank: 134/335=40.00% PHYSICS, MATERIALS SCIENCE, MULTIDISCIPLINARY)

  5. Andrew J. Mannix, Timo Saari, Brian Kiraly, Brandon L. Fisher, Chia-Hsiu Hsu, Zhi-Quan Huang, Feng-Chuan Chuang, Jouko Nieminen, Hsin Lin, Arun Bansil, Mark C. Hersam, Nathan P. Guisinger, Edge States in the Honeycomb Reconstruction of Two-Dimensional Silicon Nanosheets, Appl. Phys. Lett. 115 (2), 023102 (2019). (IF: 3.791, Rank: 47/160=29.38% PHYSICS, APPLIED)

  6. Jie Su, Mykola Telychko, Pan Hu, Gennevieve Macam, Pingo Mutombo, Hejian Zhang, Yang Bao, Fang Cheng, Zhi-Quan Huang, Zhizhan Qiu, Sherman J. R. Tan, Hsin Lin, Pavel Jelínek, Feng-Chuan Chuang, Jishan Wu, and Jiong Lu, Atomically precise bottom-up synthesis of π-extended [5]triangulene, Science Advances, 5 eaav7717 (2019). (IF: 14.136, Rank: 5/73=6.85% PHYSICS, APPLIED)

  7. Lin-Han Xu, Jia-Qi Hu, Jian-Hua Zhang, Shun-Qing Wu, Feng-Chuan Chuang, Zi-Zhong Zhu, and Kai-Ming Ho, Structural and electronic properties of T graphene nanotubes: a first-principles study, New Journal of Physics, 21, 053015 (2019). (IF: 3.729, Rank: 22/85=25.88% PHYSICS, MULTIDISCIPLINARY)

  8. Cho-Ying Lin, Yu-Zhang Huang, Han-De Chen, Chia-Hsiu Hsu, Li Huang, Zhi-Quan Huang, Feng-Chuan Chuang, and Deng-Sung Lin, Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface, Scientific Reports 9, 756 (2019). (IF: 4.379, Rank: 17/73=23.29% MULTIDISCIPLINARY SCIENCES)

  9. Zi’Ang Gao, Chia-Hsiu Hsu, Jin Liu, Feng-Chuan Chuang, Bowen Xia, Hu Xu, Li Huang, and Nian Lin, Synthesis and characterization of a single-layer conjugated metal-organic structure featuring a non-trivial topological gap, Nanoscales, 11, 878 (2019). (IF:7.790, Rank: 23/160=14.38% PHYSICS, APPLIED)

  10. Rovi Angelo B. Villaos, Christian P. Crisostomo, Zhi-Quan Huang, Shin-Ming Huang, Allan Abraham B. Padama, Marvin A. Albao, Hsin Lin, and Feng-Chuan Chuang, The Thickness Dependent Electronic properties of Pt Dichalcogenides, npj 2D Materials and Applications 3, 2 (2019). (IF: 11.106, Rank: 16/160=10.00% PHYSICS, APPLIED)

 

YEAR 2018

  1. Chia-Hsiu Hsu, Zhi-Quan Huang, Gennevieve M. Macam, Feng-Chuan Chuang, and Li Huang, Prediction of Two-Dimensional Organic Topological Insulator Bases in Metal-DCB Lattices, Appl. Phys. Lett. 113, 233301 (2018). (IF: 3.791, Rank: 47/160=29.38% PHYSICS, APPLIED)

  2. Chia-Hsiu Hsu, Zhi-Quan Huang, Cho-Ying Lin, Gennevieve M. Macam, Yu-Zhang Huang, Deng-Sung Lin, TC Chiang, Hsin Lin, Feng-Chuan Chuang, and Li Huang, Growth of predicted novel two-dimensional topological insulator based on InBi-Si(111) √7×√7, Phys. Rev. B 98, 121404 (Rapid Communications) (2018). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  3. Wing Chi Yu, Xiaoting Zhou, Feng-Chuan Chuang, Shengyuan A. Yang, Hsin Lin, and Arun Bansil, Nonsymmorphic cubic Dirac point and crossed nodal rings across the ferroelectric phase transition in LiOsO3, Phys. Rev. Materials 2, 051201 (Rapid Communications) (2018). (IF: 3.989, Rank: 134/335=40.00% PHYSICS, MATERIALS SCIENCE, MULTIDISCIPLINARY)

  4. Teng-Yu Su, Henry Medina, Yu-Ze Chen, Sheng-Wen Wang, Shao-Shin Lee, Yu-Chuan Shih, Chia-Wei Chen, Hao-Chung Kuo, Feng-Chuan Chuang, and Yu-Lun Chueh, Phase‐Engineered PtSe2‐Layered Films by a Plasma‐Assisted Selenization Process toward All PtSe2‐Based Field Effect Transistor to Highly Sensitive, Flexible, and Wide‐Spectrum Photoresponse Photodetectors, Small 1800032 (2018). (IF: 13.281, Rank: 11/160=6.88% PHYSICS, APPLIED)

  5. Wei-Sheng Lin, Henry Medina, Teng-Yu Su, Shao-Hsin Lee, Chia-Wei Chen, Yu-Ze Chen, Arumugam Manikandan, Yu-Chuan Shih, Jian-Hua Yang, Jyun-Hong Chen, Bo-Wei Wu, Kuan-Wei Chu, Feng-Chuan Chuang, Jia-Min Shieh, Chang-Hong Shen, and Yu-Lun Chueh, Selection Role of Metal Oxides into Transition Metal Dichalcogenide Monolayers by a Direct Selenization Process, ACS Appl. Mater. Interfaces 10, 9645 (2018). (IF: 9.229, Rank: 44/335=13.13% MATERIALS SCIENCE, MULTIDISCIPLINARY)

  6. Antaryami Mohantaa, Der-Jun Jang, Shu-Kai Lu, Dah-Chin Ling, J.S. Wang, R.-B. Chen, and F.-C. Chuang, Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots, Journal of Luminescence, 195, 109 (2018). (IF: 3.599, Rank: 24/99=24.24% OPTICS)

  7. Zhi-Quan Huang, Wei-Chih Chen, Gennevieve Morillo Macam, Christian Crisostomo, Shin-Ming Huang, Rong-Bin Chen, Marvin Albao, Der-Jun Jang, Hsin Lin, and Feng-Chuan Chuang, Prediction of Quantum Anomalous Hall Effect in MBi and MSb (M: Ti, Zr, and Hf) Honeycombs, Nanoscale Research Letters 13, 43 (2018). (IF: 4.703, Rank: 38/160=23.75% PHYSICS, APPLIED)

YEAR 2017

  1. Chia-Hsiu Hsu, Yimei Fang, Shuqing Wu, Zhi-Quan Huang, Christian P. Crisostomo, Yu-Ming Go, Zhi-Zhong Zhu, Hsin Lin, Arun Bansil, Feng-Chuan Chuang and Li Huang, Quantum Anomalous Hall Insulator in Asymmetrically Functionalized Germanene, Phys. Rev. B 96 165426 (2017). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  2. Christian P. Crisostomo, Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang, Hsin Lin, and Arun Bansil, Chemically-induced Large-Gap Quantum Anomalous Hall Insulator States in III-Bi Honeycombs, npj Computational Materials 3, 39 (2017). (IF: 12.241, Rank: 30/335=8.96% MATERIALS SCIENCE, MULTIDISCIPLINARY)

  3. Sheng-Wen Wang, Henry Medina, Kuo-Bin Hong, Chun-Chia Wu, Yindong Qu, Arumugam Manikandan, Teng-Yu Su, Po-Tsung Lee, Zhi-Quan Huang, Zhiming M. Wang, Feng-Chuan Chuang, Hao-Chung Kuo, and Yu-Lun Chueh, Thermally strained band gap engineering of transition metal dichalcogenide bilayers with enhanced light-matter interaction toward excellent photodetectors, ACS Nano 11 (9), 8768 (2017). (IF: 15.881, Rank: 21/335=6.27% MATERIALS SCIENCE, MULTIDISCIPLINARY)

 

YEAR 2016

  1. Ya Feng, Defa Liu, Baojie Feng, Xu Liu, Lin Zhao, Zhuojin Xie, Yan Liu, Aiji Liang, Cheng Hu, Yong Hu, Shaolong He, Guodong Liu, Jun Zhang, Chuangtian Chen, Zuyan Xu, Lan Chen, Kehui Wu, Yu-Tzu Liu, Hsin Lin, Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang, Arun Bansil and X. J. Zhou, Direct Evidence of Interaction-Induced Dirac Cones in Monolayer Silicene/Ag(111) System, Proceedings of the National Academy of Sciences, 113, 14656 (2016). (IF: 11.205, Rank: 8/73=10.96% MULTIDISCIPLINARY SCIENCES)

  2. Tzu-Cheng Wang, Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang, Wan-Sheng Su, and Guang-Yu Guo, Tunable magnetic states on the zigzag edges of hydrogenated and halogenated group-IV nanoribbons, Scientific Reports 6, 39083 (2016). (IF: 4.379, Rank: 17/73=23.29% MULTIDISCIPLINARY SCIENCES)

  3. Sung-Ping Chen, Zhi-Quan Huang, Christian P. Crisostomo, Chia-Hsiu Hsu, Feng-Chuan Chuang, Hsin Lin, and Arun Bansil, Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb, Scientific Reports 6, 31317 (2016). (IF: 4.379, Rank: 17/73=23.29% MULTIDISCIPLINARY SCIENCES)

  4. Zhi-Quan Huang, Wei-Chih Chen, Feng-Chuan Chuang, Eric H. Majzoub, and Vidvuds Ozolins, First-principles calculated decomposition pathways for LiBH4 nanoclusters, Scientific Reports 6, 26056 (2016). (IF: 4.379, Rank: 17/73=23.29% MULTIDISCIPLINARY SCIENCES)

  5. Feng-Chuan Chuang, Chia-Hsiu Hsu, Zhi-Quan Huang, Christian P. Crisostomo, Hsin-Lei Chou, Shih-Yu Wu, Chien-Cheng Kuo, Wang-Chi V. Yeh, Hsin Lin, and Arun Bansil, Prediction of two-dimensional topological insulator by forming surface alloy on Au/Si(111) substrate, Phys. Rev. B 93, 035429 (2016). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  6. Chia-Hsiu Hsu, Zhi-Quan Huang, Christian P. Crisostomo, Liang-Zi Yao, Feng-Chuan Chuang, Yu-Tzu Liu, Baokai Wang, Chuang-Han Hsu, Chi-Cheng Lee, Hsin Lin, and Arun Bansil, Two-dimensional Topological Crystalline Insulator Phase in Sb/Bi Planar Honeycomb with Tunable Dirac Gap, Scientific Reports 6, 18993 (2016). (IF: 4.379, Rank: 17/73=23.29% MULTIDISCIPLINARY SCIENCES)

 

YEAR 2015

  1. Liang-Zi Yao, Christian P. Crisostomo, Chun-Chen Yeh, Shu-Ming Lai, Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang, Hsin Lin and Arun Bansil, Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate, Scientific Reports 5, 15463 (2015). (IF: 4.379, Rank: 17/73=23.29% MULTIDISCIPLINARY SCIENCES)

  2. Christian P. Crisostomo, Liang-Zi Yao, Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang, Hsin Lin, Marvin Albao, and Arun Bansil, Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III–V Buckled Honeycombs, Nano Lett. 15, 6568 (2015). (IF: 11.189, Rank: 15/160=9.38% PHYSICS, APPLIED)

  3. Yimei Fang, Zhi-Quan Huang, Chia-Hsiu Hsu, Xiaodan Li, Yixu Xu, Yinghui Zhou, Shunqing Wu, Feng-Chuan Chuang and Zi-Zhong Zhu, Quantum Spin Hall States in Stanene/Ge(111), Scientific Reports 5, 14196 (2015). (IF: 4.379, Rank: 17/73=23.29% MULTIDISCIPLINARY SCIENCES)

  4. Chia-Hsiu Hsu, Zhi-Quan Huang, Feng-Chuan Chuang, Chien-Cheng, Kuo, Yu-Tzu Liu, Hsin Lin, Arun Bansil, The nontrivial electronic structure of Bi/Sb honeycombs on SiC(0001), New J. Phys. 17, 025005 (2015). (IF: 3.729, Rank: 22/85=25.88% PHYSICS, MULTIDISCIPLINARY)

 

YEAR 2014

  1. Zhi-Quan Huang, Bo-Hung Chou, Chia-Hsiu Hsu, Feng-Chuan Chuang, Hsin Lin, Arun Bansil, Tunable topological electronic structure of silicene on semiconducting Bi/Si(111)-√3×√3 substrate: a first-principles study, Phys. Rev. B 90, 245433 (2014). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  2. Shih-Yu Wu, Chia-Hsiu Hsu, Wang-chi V. Yeh, Hsin Lin, Feng-Chuan Chuang, and Chien-Cheng Kuo, Stable structure of high In coverage on Si(111)-√3×√3 Au, Phys. Rev. B 90, 235407 (2014). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  3. Bo-Hung Chou, Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang, Yu-Tzu Liu, Hsin Lin, Arun Bansil, Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators, New Journal of Physics 16, 115008 (2014). (IF: 3.729, Rank: 22/85=25.88% PHYSICS, MULTIDISCIPLINARY)

  4. Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang, Yu-Tzu Liu, Hsin, Lin, Wan-Sheng Su, Vidvuds Ozoilns, Arun Bansil, Strain driven topological phase transitions in atomically thin films of group IV and V elements in the honeycomb structures, New Journal of Physics, 16 105018 (2014). (IF: 3.729, Rank: 22/85=25.88% PHYSICS, MULTIDISCIPLINARY)

  5. Chia-Hsiu Hsu, Hua-Rong Chang, Feng-Chuan Chuang, Yu-Tzu Liu, Zhi-Quan Huang, Hsin Lin, Vidvuds Ozolins and Arun Bansil, First-principles study of atomic structures and electronic properties of ultrathin Bi films on Ge(111), Surface Science 626, 78 (2014). (IF: 1.942, Rank: 45/69=65.22% PHYSICS, CONDENSED MATTER)

  6. Feng-Chuan Chuang, Liang-Zi Yao, Zhi-Quan Huang, Yu-Tzu Liu, Chia-Hsiu Hsu, Tanmoy Das, Hsin Lin, and Arun Bansil, Prediction of large gap two-dimensional topological insulators consisting of bilayers of group III elements with Bi, Nano Lett. 14, 2505 (2014). (IF: 11.189, Rank: 15/160=9.38% PHYSICS, APPLIED)

 

YEAR 2013

  1. Marvin A. Albao, Darwin B. Putungan, Chia-Hsiu Hsu, and Feng-Chuan Chuang, Enhanced nucleation of Al islands on H-dosed Si(100)-2×1 surface: a combined DFT and KMC study, Surface Science 617, 78 (2013). (IF: 1.942, Rank: 45/69=65.22% PHYSICS, CONDENSED MATTER)

  2. Zhi-Quan Huang, Feng-Chuan Chuang, Chia-Hsiu Hsu, Yu-Tzu Liu, Hua-Rong Chang, Hsin Lin, and Arun Bansil, Nontrivial topological electronic structures in single Bi(111) bilayer on substrates: A first-principles study, Phys. Rev. B 88, 165301 (2013). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  3. Chia-Hsiu Hsu, Vidvuds Ozolins, and Feng-Chuan Chuang, First-principles study of Bi and Sb intercalated graphene on SiC(0001) substrate, Surface Science 616, 149 (2013). (IF: 1.942, Rank: 45/69=65.22% PHYSICS, CONDENSED MATTER)

  4. O. Lozano, Q.Y. Chen, P.V. Wadekar, H.W. Seo, P.V. Chinta, L.H. Chu, L.W. Tu, Ikai Lo, S.W. Yeh, N.J. Ho, F.C. Chuang, D.J. Jang, D. Wijesundera, Wei-Kan Chu, Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films, Solar Energy Materials and Solar Cells, 113, 171 (2013). (IF: 7.267, Rank: 28/160=17.50% PHYSICS, APPLIED)

  5. F.C. Chuang, Chia-Hsiu Hsu, Chia-Yu Chen, Zhi-Quan Huang, Vidvuds Ozolins, Hsin Lin and Arun Bansil, Tunable topological electronic structures in Sb(111) bilayers: A first-principles study, Appl. Phys. Lett. 102, 022424 (2013). (IF: 3.791, Rank: 47/160=29.38% PHYSICS, APPLIED)

 

YEAR 2012

  1. Chia-Hsiu Hsu, Wen-Huan Lin, Vidvuds Ozolins, and F. C. Chuang, Electronic structure of the indium-adsorbed Au/Si(111)-√3×√3 surface: a first-principles study, Phys. Rev. B 85, 155401 (2012). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  2. Chia-Hsiu Hsu, Wen-Huan Lin, Vidvuds Ozolins, and F.C. Chuang, Electronic structures of an epitaxial graphene monolayer on SiC(0001) after metal intercalation (metal = Al, Ag, Au, Pt, and Pd): a first-principles study, Appl. Phys. Lett. 100, 063115 (2012). (IF: 3.791, Rank: 47/160=29.38% PHYSICS, APPLIED)

 

YEAR 2011

  1. F.C. Chuang, Wen-Huan Lin, Zhi-Quan Huang, Chia-Hsiu Hsu, Chien-Cheng Kuo, Vidvuds Ozolins, and V. Yeh, Electronic structures of an epitaxial graphene monolayer on SiC(0001) after gold intercalation: a first-principles study, Nanotechnology, 22, 275704 (2011). (IF: 3.874, Rank: 44/160=27.50% PHYSICS, APPLIED)

  2. Darwin B. Putungan, Henry J. Ramos, F.C. Chuang, and Marvin A. Albao. Modeling of co-deposition of In and Sn on Si(100): A Kinetic Monte Carlo Study, International Journal of Modern Physics B 25, 1889 (2011). (IF: 1.219, Rank: 34/55=61.82 PHYSICS, MATHEMATICAL)

  3. F. C. Chuang, Zhi-Quan Huang, Wen-Huan, Lin, Marvin Albao, and W.S. Su, Structural and electronic properties of hydrogen adsorptions on BC3 sheet and graphene: a comparative study, Nanotechnology 22, 135703 (2011). (IF: 3.874, Rank: 44/160=27.50% PHYSICS, APPLIED)

 

YEAR 2010

  1. W. S. Su, F.C. Chuang, K. M. Lin, and T. C. Leung, Influence of strain on the hexagonal motifs of the Ir(100) surface reconstructions: A first-principles study, J. Vac. Sci. Technol. A, 28 1366 (2010). (IF: 2.427, Rank: 86/160=53.75% PHYSICS, APPLIED)

  2. B.R. Wu, Zhi-Quan Huang, W.S. Su, Y.Y. Hsieh, and F.C. Chuang, Atomic structure and mechanical properties of BC2N superlattice, Diamond and related materials 19, 1341 (2010). (IF: 3.315, Rank: 53/160=33.13% PHYSICS, APPLIED)

  3. Marvin A. Albao, Chia-Hsiu Hsu, Darwin B. Putungan, and F.C. Chuang, Room-temperature deposition of group III metals on Si(100): A Comparative Study of Nucleation Behavior, Surface Science 604, 396 (2010). (IF: 1.942, Rank: 45/69=65.22% PHYSICS, CONDENSED MATTER)

  4. F.C. Chuang, C.C. Hsu, Y.Y. Hsieh, and M.A. Albao, Atomic and electronic structures of AuSin (n = 1-16) clusters: a first-principles study, Chin. J. Phys. 48, 79 (2010). (IF: 3.237, Rank: 29/85=34.12% MULTIDISCIPLINARY SCIENCES)

  5. Chia-Hsiu Hsu, F.C. Chuang, Marvin A. Albao, and Vincent Yeh, Electronic structure of the Pb/Si(111)-(√7×√3) surface reconstruction: a first-principles study, Phys. Rev. B 81, 033407 (2010). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

 

YEAR 2009

  1. M.A. Albao, J.W. Evans, and F.C. Chuang, Kinetic Monte Carlo study on the role of defects and detachment on formation and growth of In chains on Si(100), J. Phys.: Condens. Matter 21, 405002 (2009). (IF: 2.333, Rank: 41/69=59.42% PHYSICS, CONDENSED MATTER)

  2. W. S. Su, F. C. Chuang, T. H. Cho, T. C. Leung, The screening effect on field enhancement factor of the finite-length small radius single-walled carbon nanotubes, J. Appl. Phys. 106, 014301 (2009). (IF: 2.546, Rank: 79/160=49.38% PHYSICS, APPLIED)

  3. M.A. Albao, F.C. Chuang, and J.W. Evans, Kinetic Monte Carlo simulation of oxide island formation and step pinning during etching by oxygen of vicinal Si(100), Thin Solid Films 517, 1949 (2009). (IF: 2.183, Rank: 94/160=58.75% PHYSICS, APPLIED)

 

YEAR 2008

  1. F.C. Chuang, Chia-Hsiu Hsu, C.-Z. Wang, and K.-M. Ho, Atomic and electronic structures of Ag/Si(111)-c(12×2) surface: A first-principles study, Phys. Rev. B 78, 245418 (2008). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  2. F.C. Chuang, Chia-Hsiu Hsu, C.-Z. Wang, and K.-M. Ho, Honeycomb chain structure of the Au/Si(111)-(5×2) surface reconstruction: a first-principles study, Phys. Rev. B, 77, 153409 (2008). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

 

YEAR 2006

  1. F.-C. Chuang, C.Z. Wang and K.M. Ho, Structure of aluminum clusters Alx(x= 2 to 23): Genetic algorithm tight-binding calculations, Phys. Rev. B 73, 125431 (2006). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  2. TL Chan, CV. Ciobanu, F.-C. Chuang, N. Lu, C.-Z. Wang and K.-M. Ho, Magic structures of H-passivated <110> Silicon nanowires, Nano Letters 6(2) 277 (2006). (IF: 11.189, Rank: 15/160=9.38% PHYSICS, APPLIED)

 

YEAR 2007

  1. C.V. Ciobanu, F.C. Chuang, and D. E. Lytle, On the structure of the Si(103) surface, Appl. Phys. Lett. 91, 171909 (2007). (IF: 3.791, Rank: 47/160=29.38% PHYSICS, APPLIED)

  2. F.C. Chuang, Y.Y. Hsieh, C.C. Hsu, and M.A. Albao, Geometries and stabilities of Ag-doped Sin (n = 1-13) clusters: a first-principles study, The Journal of Chemical Physics 127, 144313 (2007). (IF: 3.488, Rank: 9/37=24.32% PHYSICS, ATOMIC, MOLECULAR & CHEMICAL)

  3. C.-Y. Ren, S.-F. Tsay and F.C. Chuang, First-principles study of the atomic and electronic structure of the Si(111)-(5×2)-Au surface reconstruction, Phys. Rev. B, 76 075414 (2007). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  4. J.C. Xia, Ryan Daly, F.-C. Chuang, Laura Parker, Jan Jensen, Claudio Margulis, Sugar Folding: A novel structural prediction tool for oligosaccharides and polysaccharides I, Journal of Chemical Theory and Computation 3, 1620 (2007). (IF: 6.006, Rank: 5/37=13.5% PHYSICS, ATOMIC, MOLECULAR & CHEMICAL)

  5. J.C. Xia, Ryan Daly, F.-C. Chuang, Laura Parker, Jan Jensen, Claudio Margulis, Sugar Folding: A novel structural prediction tool for oligosaccharides and polysaccharides II, Journal of Chemical Theory and Computation 3, 1629 (2007). (IF: 6.006, Rank: 5/37=13.5% PHYSICS, ATOMIC, MOLECULAR & CHEMICAL)

  6. N. Lu, C.V. Ciobanu, T.L. Chan, F.C. Chuang, C.Z. Wang, and K.M. Ho, The structure of ultra-thin H-passivated [112] silicon nanowires, Journal of Physical Chemistry C 111, 7933 (2007). (IF: 4.126, Rank: 68/162=41.98% CHEMISTRY, PHYSICAL )

  7. F.-C. Chuang, First-principles study of indium-stabilized {103} facets in Ge quantum dots, Phys. Rev. B 75, 115408 (2007). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

 

YEAR 2005

  1. F.-C. Chuang, B. Liu, C.Z. Wang, T.L. Chan, and K.-M. Ho, Global structural optimization of Si magic clusters on the Si(111) 7×7 surface, Surface Science 598, L339 (2005). (IF: 1.942, Rank: 45/69=65.22% PHYSICS, CONDENSED MATTER)

  2. F.-C. Chuang, C. V. Ciobanu, C.Z. Wang and K.M. Ho, Model reconstructions for the Si(337) orientation, Journal of Applied Physics 98, 073507 (2005). (IF: 2.546, Rank: 79/160=49.38% PHYSICS, APPLIED)

  3. F.-C. Chuang, C. V. Ciobanu, C. Predescu, C.Z. Wang and K.M. Ho, Structure of Si(114) determined by global optimization methods, Surface Science 578, 183 (2005). (IF: 1.942, Rank: 45/69=65.22% PHYSICS, CONDENSED MATTER)

  4. Songyou Wang, C.Z. Wang, F.-C. Chuang, James R. Morris, K.M. Ho, Ab initio molecular dynamics simulation of liquid Al88Si12 alloys, J. Chem. Phys. 122, 034508 (2005). (IF: 3.488, Rank: 9/37=24.32% PHYSICS, ATOMIC, MOLECULAR & CHEMICAL)

 

YEAR 2004

  1. Songyou Wang, C.Z. Wang, F.-C. Chuang, James R. Morris, K.M. Ho, Ab initio molecular dynamics simulation of liquid AlxGe1-x alloys, Phys. Rev. B 70, 224205 (2004). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

  2. F.-C. Chuang, Cristian V. Ciobanu, V. B. Shenoy, Cai-Zhuang Wang, and Kai-Ming Ho, Finding the reconstructions of semiconductor surfaces via a genetic algorithm, Surface Science 573, L375 (2004). (IF: 1.942, Rank: 45/69=65.22% PHYSICS, CONDENSED MATTER)

  3. F.-C. Chuang, C. Z. Wang, Serdar Ögüt, James R. Chelikowsky, and K. M. Ho, Melting of small Sn clusters by ab initio molecular dynamics simulations, Phys. Rev. B 69, 165408 (2004). (IF: 4.036, Rank: 41/160=25.63% PHYSICS, APPLIED)

 
 
 
 
 
 
 
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